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RFP25N05
Data Sheet July 1999 File Number
2112.4
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits. Formerly developmental type TA09771.
Features
* 25A, 50V * rDS(ON) = 0.047 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND RFP25N05
Symbol
D
NOTE: When ordering use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-504
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RFP25N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP25N05 50 50 20 25 Refer to Peak Current Curve Refer to UIS Curve 72 0.48 -55 to 175 300 260 UNITS V V V A A W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 11) VGS = VDS , ID = 250mA (Figure 10) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS,TC = 150oC VGS = 20V ID = 25A, VGS = 10V (Figure 9) VDD = 25V, ID 12.5A, RL = 2.0, VGS = 10V, RG = 10 (Figure 13) MIN 50 2 VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 40V, ID = 25A, RL = 1.6 Ig(REF) = 0.75mA (Figure 13) (Figure 3) TYP 14 30 45 22 1075 350 100 MAX 4 1 25 100 0.047 60 100 80 45 3 2.083 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS RJC RJA
VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD tRR ISD = 25A ISD = 25A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns
4-505
RFP25N05 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 30
25 ID , DRAIN CURRENT (A) 20 15
10 5 0 25
50
75
100
125
150
175
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TA 100 101
PDM
0.01 10-5
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200 100 ID, DRAIN CURRENT (A)
IDM , PEAK CURRENT CAPABILITY (A)
TC = 25oC TJ = MAX RATED SINGLE PULSE
VGS = 20V 200 VGS = 10V 100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
100s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms
1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms 100ms DC 100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
10 10-5
10-4
10-3 10-2 10-1 t, PULSE WIDTH (s)
100
101
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-506
RFP25N05 Typical Performance Curves
100 IAS , AVALANCHE CURRENT (A)
(Continued)
70 VGS = 20V 60 VGS = 10V VGS = 8V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 7V 30 VGS = 6V 20 VGS = 4.5V 10 0 VGS = 5V
STARTING TJ = 25oC
ID , DRAIN CURRENT (A) 10
50 40
10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms)
0
2 4 6 VDS , DRAIN TO SOURCE VOLTAGE (V)
8
NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON) , DRAIN TO SOURCE CURRENT (A)
70 60 50 40 30 20 10 0 0
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
VDD = 15V PULSE DURATION 80s DUTY CYCLE = 0.5% MAX
2.5 -55oC 25oC
2
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 25A
175oC
1.5
1
0.5
2
4
6
8
10
0 -80
-40
VGS , GATE TO SOURCE VOLTAGE (V)
0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
200
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
2 ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.5 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS
2 ID = 250A 1.5
1
1
0.5
0.5
0 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0 -80
-40
0
40
80
120
160
200
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
4-507
RFP25N05 Typical Performance Curves
1600 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS CISS
(Continued)
50 VDD = BVDSS 37.5 VDD = BVDSS 7.5 10 VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1200
800 COSS 400 CRSS
25 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 2.0 IG(REF) = 0.75mA VGS = 10V 0 20 IG (REF) IG (ACT) t, TIME (s) 80 IG (REF) IG (ACT)
5.0
12.5
2.5
0 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 25
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
-
0V
IAS 0.01
0 tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-508
RFP25N05 Test Circuits and Waveforms
(Continued)
VDS RL
VDD VDS
Qg(TOT)
VGS = 20V VGS
+
Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V
DUT Ig(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORM
4-509
RFP25N05 PSPICE Electrical Model
.SUBCKT RFP25N05 2 1 3; rev 8/19/94
CA 12 8 1.83e-9 CB 15 14 1.98e-9 CIN 6 8 9.7e-10
DPLCAP 5 LDRAIN RSCL1 RSCL2 + 51 5 51 ESCL 50 6 8 VTO 6 + 21 MOS1 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE RDRAIN 16 11 17 EBREAK 18 MOS2 + DBODY DBREAK
DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.9 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1
GATE
10
DRAIN 2
ESG + EVTO + 18 8
-
LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.5e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.1e-3 RGATE 9 20 2.88 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 20.3e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.764
1 LGATE
9
20
-
RGATE
S1A 12 13 8 S1B CA EGS +
S2A 14 13 S2B 13 CB 6 8 + EDS 5 8 14 IT 15 17 RBREAK 18 RVTO 19 VBAT +
-
-
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/108,6))} .MODEL DBDMOD D (IS = 2.32e-13 RS = 5.72e-3 TRS1 = 2.56e-3 TRS2 = -5.13e-6 CJO = 1.18e-9 TT = 5.62e-8) .MODEL DBKMOD D (RS = 2.00e-1 TRS1 = 3.33e-4 TRS2 = 2.68e-6) .MODEL DPLCAPMOD D (CJO = 6.55e-10 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.89 KP = 15.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.04e-3 TC2 = -1.04e-6) .MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 1.77e-5) .MODEL RSCLMOD RES (TC1 = 2.0e-3 TC2 = 1.5e-6) .MODEL RVTOMOD RES (TC1 = -5.35e-3 TC2 = -3.77e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.98 VOFF= -3.02) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.
4-510
RFP25N05
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4-511

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